🏭 Brand / Model
Oxford / PlasmaPro 100 Cobra
⚙️ Equipment Purpose / Key Features
The inductively coupled plasma (ICP) etching system utilizes high-energy plasma technology to achieve high selectivity, precision, and uniform etching. It is suitable for silicon and III–V compound semiconductor materials and supports low-temperature processes down to –150 °C as well as atomic layer etching (ALE) technology. This system meets diverse research needs in advanced nanostructures, high aspect ratio etching, and heterogeneous material integration.
📊 Technical Specifications
- ICP Plasma Source Power: up to 3000 W (2 MHz)
- RF Power on Lower Electrode: up to 300 W (13.56 MHz)
- Process Gases: BCl₃, Cl₂, H₂, N₂, Ar, SF₆, O₂, CH₄
- Process Temperature: –150 °C to 400 °C
- Maximum Substrate Size: Samples with 8-inch diameter
- Additional Features: Supports ALE processes; particularly suitable for recessed etching and nanoscale thin-film etching in GaN HEMT applications
🔬 Applications
- III–V / Compound Semiconductor Etching: GaAs/AlGaAs, InP for optical and data communication devices
- Power / RF Device Material Etching: GaN, SiC, etc.
- Metal and Hard Mask Etching: Aluminum (Al), titanium (Ti) alloys, metal stacks, and hard mask materials
- Insulator / Dielectric Etching: Silicon dioxide (SiO₂), silicon nitride (Si₃N₄), quartz, etc.
- 2D Material or Nanostructure Development: Graphene, carbon nanotubes, and advanced device research
- Optoelectronic / Microdisplay / Microsensor Devices: Micro-LED (µLED), metalenses, MEMS sensors, etc.
📍 Location
Etching Area, Cleanroom, 2F, Excellence Research Building, Shuiyuan Campus, National Taiwan University
📞 Contact / Reservation
Manager: Dr. Chia-Yang Tsai
Reservation: Please book through the “Chip Driven – Taiwan Semiconductor Resource Sharing Platform.”
⚠️ Safety and Usage Notes
- Users must complete instrument training and obtain authorization before operation.
- Follow all center safety regulations and standard operating procedures (SOPs).
- Stop operation immediately and notify the manager if any abnormal condition occurs.
- Unauthorized metals are strictly prohibited from entering the chamber.
- Refer to the Operation Manual for detailed procedures.