半導體中心-英文

🏭 Brand / Model
Oxford / PlasmaPro 100

⚙️ Equipment Function / Features
This system adopts an Inductively Coupled Plasma (ICP) source design, enabling high-uniformity and high-quality thin film deposition under low-temperature conditions. It is particularly suitable for temperature-sensitive substrates or materials and meets the demanding process requirements of semiconductor device fabrication, advanced optical structures, and nanomaterial applications.

📊 Technical Specifications

• ICP plasma source power: up to 3000 W (2 MHz)
• Bottom electrode RF power: up to 300 W (13.56 MHz)
• Process gases: CF₄、O₂、Ar、N₂O、NH₃、SiH₄、N₂
• Process temperature: RT ~ 400 °C
• Maximum substrate size: Samples up to 8-inch diameter
• Key feature: Capable of high-quality thin film deposition at low working temperatures (<200 °C), ideal for temperature-sensitive substrates and materials.

🔬 Applications

• Research and development of low-temperature, high-quality thin film deposition
• Suitable for temperature-sensitive substrates (e.g., polymers, metal layers, photoresist-coated samples)
• Processes requiring dense, low-stress, and highly uniform thin films
• Fabrication of NEMS/MEMS and optoelectronic devices
• Supports multi-material process development (oxides, nitrides, carbides, etc.)

📍 Location
CVD Area, Cleanroom (2F), Excellence Research Building, Shuiyuan Campus, National Taiwan University

📞 Administrator / Reservation Method
Administrator: Dr. Chia-Yang Tsai
Reservation: Please make a reservation through the “Chip Driven – Taiwan Semiconductor Resource Sharing Platform.”

⚠️ Safety and Operation Guidelines

• Users must complete equipment training and obtain operation authorization before use
• Follow all cleanroom safety regulations and standard operating procedures (SOP)
• Stop operation immediately and notify the administrator if any abnormal conditions occur
• Photoresists and adhesive tapes are strictly prohibited inside the chamber
• Refer to the Operation Manual for detailed procedures