🏭 Brand / Model
Oxford / PlasmaPro 100
⚙️ Equipment Function / Features
This system adopts an Inductively Coupled Plasma (ICP) source design, enabling high-uniformity and high-quality thin film deposition under low-temperature conditions. It is particularly suitable for temperature-sensitive substrates or materials and meets the demanding process requirements of semiconductor device fabrication, advanced optical structures, and nanomaterial applications.
📊 Technical Specifications
- ICP plasma source power: up to 3000 W (2 MHz)
- Bottom electrode RF power: up to 300 W (13.56 MHz)
- Process gases: CF4、O2、Ar、N2O、NH3、SiH4、N2
- Process temperature: The standard deposition process temperature of the system is 150 °C.
- Maximum substrate size: Samples up to 8-inch diameter
- Key feature: Capable of high-quality thin film deposition at low working temperatures (<200 °C), ideal for temperature-sensitive substrates and materials.
🔬 Applications
- Research and development of low-temperature, high-quality thin film deposition, Available standard thin-film deposition processes include amorphous silicon (a-Si), silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiOxNy).
- Processes requiring dense, low-stress, and highly uniform thin films
- Suitable for temperature-sensitive substrates
📍 Location
CVD Area, Cleanroom (2F), Excellence Research Building, Shuiyuan Campus, National Taiwan University
📞 Administrator / Reservation Method
Administrator: Dr. Chia-Yang Tsai
Reservation: Please make a reservation through the “Chip Driven – Taiwan Semiconductor Resource Sharing Platform.”
⚠️ Safety and Operation Guidelines
- Users must complete equipment training and obtain operation authorization before use
- The maximum recommended film thickness for a single deposition run is less than 1 μm
- Follow all cleanroom safety regulations and standard operating procedures (SOP)
- Stop operation immediately and notify the administrator if any abnormal conditions occur
- Photoresists and adhesive tapes are strictly prohibited inside the chamber
- Refer to the Operation Manual for detailed procedures