半導體中心-英文

🏭 Brand / Model
Veeco / Savannah S200

⚙️ Equipment Function / Features
This system combines the precision of Atomic Layer Deposition (ALD) with the efficiency of thermal processing, enabling the deposition of highly dense and uniform thin films on nanostructures with high aspect ratios and complex geometries. Depending on application requirements, it can deposit various material compositions or high-quality functional films with dielectric or conductive properties, making it highly suitable for advanced process development and functional device fabrication.

📊 Technical Specifications

• Process gases: N₂、H₂ (planned)
• Precursors: TMA, TDMAHf (expandable)
• Process temperature: up to 350 °C
• Supported substrate sizes: 2" – 8" wafers or small pieces
• Additional modules:
  1. In-situ Quartz Crystal Microbalance (QCM)
  2. Self-Assembled Monolayers (SAMs)

🔬 Applications

• Gate dielectric layer deposition for semiconductor device fabrication
• 2D materials and emerging electronic devices
• Optoelectronic and sensor components
• MEMS/NEMS fabrication
• Nanotechnology and surface engineering

📍 Location
CVD Area, Cleanroom (2F), Excellence Research Building, Shuiyuan Campus, National Taiwan University

📞 Administrator / Reservation Method
Administrator: Dr. Chia-Yang Tsai
Reservation: Please make a reservation through the “Chip Driven – Taiwan Semiconductor Resource Sharing Platform.”

⚠️ Safety and Operation Guidelines

• Users must complete equipment training and obtain operation authorization before use
• Follow all cleanroom safety regulations and standard operating procedures (SOP)
• Stop operation immediately and notify the administrator if any abnormal conditions occur
• Prohibit loading of metals, photoresists, or adhesive tapes into the chamber
• Deposition thickness must be less than 50 nm
• Refer to the Operation Manual for detailed procedures