半導體中心-英文

🏭 Brand / Model
Veeco / Fiji G2

⚙️ Equipment Function / Features
The Plasma-Enhanced Atomic Layer Deposition (PE-ALD) system utilizes plasma technology and a unique self-limiting reaction mechanism to achieve thin film growth with excellent step coverage and uniformity over large areas. It enables high-quality film deposition from the nanometer to atomic scale. This system is suitable for depositing high-quality dielectric (oxide and nitride) thin films. Additionally, its fixture-free design accommodates substrates of various sizes—from small fragments to 8-inch (200 mm) wafers—meeting the needs of precision processing and advanced research.

📊 Technical Specifications

• ICP plasma source power: up to 300 W (13.56 MHz)
• Process gases: Ar、N₂、O₂、H₂、NH₃
• Precursors: TMA(Al2O3/AlN)、TDMAHf(HfO2/HfN)、TDMAT(TiO2/TiN) (expandable)
• Process temperature: up to 350 °C
• Operating modes:
  1. Continuous Mode / Exposure Mode
  2. Plasma Mode / Thermal Mode
• Supported substrate sizes: 2"–8" wafers or small pieces

🔬 Applications

• Gate dielectric layer deposition for semiconductor device fabrication
• 2D materials and emerging electronic devices
• Optoelectronic and sensor components
• MEMS/NEMS fabrication
• Nanotechnology and surface engineering

📍 Location
CVD Area, Cleanroom (2F), Excellence Research Building, Shuiyuan Campus, National Taiwan University

📞 Administrator / Reservation Method
Administrator: Dr. Chia-Yang Tsai
Reservation: Please make a reservation through the “Chip Driven – Taiwan Semiconductor Resource Sharing Platform.”

⚠️ Safety and Operation Guidelines

• Users must complete equipment training and obtain operation authorization before use
• Follow all cleanroom safety regulations and standard operating procedures (SOP)
• Stop operation immediately and notify the administrator if any abnormal conditions occur
• Prohibit loading of metals, photoresists, or adhesive tapes into the chamber
• Deposition thickness must be less than 50 nm
• Refer to the Operation Manual for detailed procedures