超臨界低溫缺陷鈍化技術在半導體元件應用

隨著現代科技發展，半導體的需求逐年增高，傳統的矽基半導體會走向高移動率的 SiGe 通道電晶體，缺陷會大幅上升，影響電子元件性能。除此之外，寬能隙半導體應用發展也越來越多元，如光電元件、功率元件及通訊射頻元件等。但寬能隙半導體元件(SiC、GaN)在磊晶或製程過程中材料容易產生缺陷，造成元件性能下降與可靠度變差。因此急需解決缺陷問題的方法。電子元件內的缺陷產生原因主要有三大類，包括： (1)塊材缺陷、 (2)介面缺陷、 (3)元件製程產生的缺陷。

本團隊獨創的低溫缺陷鈍化技術-超臨界流體技術，可在低溫(RT~250 oC)下可有效鈍化半導體元件內的缺陷，提升元件性能與可靠度。

Application of Supercritical Low-Temperature Defect Passivation Technology in Semiconductor Devices

With the advancement of modern technology, the demand for semiconductors has been increasing annually. Traditional silicon-based semiconductors are transitioning towards high mobility SiGe channel transistors, resulting in a significant increase in defects that affect the performance of electronic devices. Additionally, there is a growing diversity in the applications of wide-bandgap semiconductors, such as optoelectronic devices, power devices, and communication radio frequency (RF) devices. However, wide-bandgap semiconductor devices (SiC, GaN) are prone to defects during epitaxy or fabrication processes, leading to performance degradation and reduced reliability. Therefore, there is an urgent need to address the issue of defects.

The causes of defects in electronic devices mainly fall into three categories: (1) bulk material defects, (2) interface defects, and (3) defects generated during device fabrication processes.

Our team has innovated a low-temperature defect passivation technology - supercritical fluid technology, which can effectively passivate defects within semiconductor devices at low temperatures (RT~250℃), thus enhancing the performance and reliability of the devices.